• Solution

  • WL-CSP Structure
    and Characteristic

  • WL-CSP New
    Technology

  • Reliability Data

  • Services

WL-CSP

Very small, thin package for smart phone/wearable

○Mold Type: Passed AEC-Q100 “G0” grade reliability test,　and 18 years experience for automobile application
○Mold-less Type: Low profile 0.2mm Max. package height,　0.1mm fine pitch terminals
○Turn-key solution: RDL ~ singulation ~ electrical test ~ T&R packing

Cu RDL

Good solutions for power devices / high frequency devices

○Protect wire bonding damage by 15um thick RDL
○20% reduction of ON resistance compared with non-RDL
○Passive devices (inductor coil, etc.) with multilayered RDL
○High pin count with multilayered (2~3) RDL

Multi-Chip WL-CSP

Next generation package

○Multi-Chip structure by collaboration of RDL, Cu pillar　and assembly technologies
○Low resistance due to short wiring compared with wire　bonding connection

Mold type Mold-less type
Structure
Features High reliability
(AEC-Q100 G0)		 Low-profile
Fine pitch		 For device embedded
substrate		 Terminal forming
on Al pads
PKG height(total) 0.3mm～ 0.2mm～ 1.6mm～ 0.2mm～
Terminal pitch 0.3mm～ 0.1mm～ - 0.1mm～
Terminal diameter 150um～ 75um~ 75um~ 75um~
Terminal height 60um~250um 20um~250um 6um~ 20um~250um

Options: Backside treatment (resin coating, mirror finish), Plating (SnAg, Au, Ni)

Terminal pitch / terminal height variation matrix

Thick RDL technology

Structure

Cu/Ni/Au thickness * : 15/3/0.5μm
* standard Cu thickness: 5μm
Cu Line & Space : 30/30μm

Feature

Protect wire bonding damage by 15um thick RDL
20% reduction of ON resistance compared with non-RDL
30% chip size shrink with POE (Pad ON Element) structure compared with non- POE

Multi-layer Cu RDL technology

Structure

Cu RDL :5μm
# of Cu layers :2~3
Polyimide :13μm
Cu L/S : 30/30μm

Feature

Embedded inductor coil by 2 layers RDL
High pin count with multilayered (2~3) RDL
Over 600V break down with 13um polyimide

Multi-Chip WL-CSP technology

Structure

Cu RDL :5μm
PKG height :0.5mm Max.
Cu L/S : 15/10μm

Feature

Chip-size MCP by 300µm high Cu post technology
Low resistance due to short wiring compared with wire bonding connection

Reliability data (AEC-Q100)

■Mold Type ~ Grade ０ ~
Test Category Test Condition Note
Pre-condition 85℃/85% RH, 168H, reflow 260℃ Package Level
High Temp. Storage Ta=150℃, 2000H Package Level
Temp. Cycle -65℃~RT~175℃, 500cyc Package Level & Board Level
■Mold-Less Type ~ Grade 1 ~
Test Category Test Condition Note
Pre-condition 85℃/85% RH, 168H, reflow 260℃ Package Level
High Temp. Storage Ta=150℃, 1000H Package Level
Temp. Cycle -65℃~RT~150℃, 500cyc Package Level & Board Level

Services

○RDL layout design, photomask preparation
○Pb-free soldering (plating & paste printing & ball mounting)
○Wafer mapping (generating and merging data)
○Full turnkey solution
・RDL ~ Insulation layer ~ terminal forming
・Singulation
・Electrical test (logic & analog)
・Die inspection (6D)
・Tape and reel packing
・Options / Si backside treatment (resin coating, mirror finish), plating (SnAg, Au, Ni)
○Ship to customer in wafer form, T&R
Drop ship to final customer