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New High Reliability 128M/256Mbit SDRAMs Equipped with Output
Drivability Adjustment Function

2014 News Release

Mar 20, 2014

New High Reliability 128M/256Mbit SDRAMs Equipped with Output Drivability Adjustment Function

Reduces radiant noise and minimizes 
system costs in automotive and 
industrial applications

LAPIS Semiconductor Co., Ltd., a ROHM Group Company, has recently expanded its lineup of high reliability DRAMs to include 128Mbit (MD56V72160C) and 256Mbit (MD56V82160A) SDRAMs equipped with a 4-stage output drivability adjustment function that adjusts the current drive capability based on the user's system, reducing radiant noise without the need for external noise suppression components or damping resistors.
In addition, the lead frame utilizes a copper (Cu) frame with high solder connection reliability, making them ideal for automotive systems and other applications requiring high reliability.

In automotive systems, which utilize low- to medium-capacity SDRAM, radiant noise generated during operation often adversely affects the performance of high-frequency circuits, making it imperative to minimize radiant noise to maintain system quality.
In response, LAPIS Semiconductor has integrated an output drivability adjustment function in conventional 16Mbit and 64Mbit products that changes the current drive capability during read data output in 3 stages in order to reduce radiant noise during SDRAM operation and improve read data output waveform characteristics by impedance matching.
This function is highly rated in the automotive field, and 128Mbit/256Mbit SDRAMs have been developed to support applications requiring high-capacity SDRAM.

Also, as mainstream DRAM shifts to higher speed, higher capacity DDR2/DDR3-SDRAM, there is growing uncertainty concerning the supply of low- to medium-capacity SDRAM.
LAPIS Semiconductor is the only domestic manufacturer able to provide long-term supply of this type of legacy DRAM, and will continue to expand its product lineup to develop products optimized for both the automotive and industrial sectors.


Key Features

  • Built-in output drivability adjustment function
    • An output drivability adjustment function is included that changes the current drive capability during read data output to reduce radiant noise during SDRAM operation and improve read data output waveform characteristics through impedance matching.
      4-stage drivability settings are enabled via an extended mode register set. This function optimizes the current drive capability based on the user's system, reducing radiant noise and eliminating the need for external countermeasures.
      In addition, products can be provided with factory default drivability settings that enable optimized output drivability without setting an extended mode register using existing SDRAM controllers.
  • Copper lead frame
    • To meet the high reliability requirements for soldered joints in automotive circuits, copper (Cu) lead frames, which feature a thermal expansion coefficient closer to that of the board compared with conventional 42-alloy lead frames, are used to improve solder joint reliability and meet the thermal expansion cycle standards for board mounting conditions required by auto manufacturers.
      Tin whisker occurrences during solder plating are also minimized.
  • Automotive-grade
    • Customized testing processes are offered to fit customer quality requirements and achieve high quality.
  • KGD (Known Good Die) chips available
    • The same quality as packaged products is guaranteed at the wafer level.
      The testing process can also be adapted to fit customer requests and ensure a high level of quality.

      LAPIS Semiconductor will continue to offer a long-term, stable supply of high reliability SDRAM products while expanding its legacy DRAM*1 lineup to include 256Mbit DDR1 and 512Mbit DDR2 products.

Terminology

  • *1 : Legacy DRAM
    • As PCs and mobile phones become more and more sophisticated, the DRAM market has shifted to higher-capacity, higher-speed DRAM and the number of suppliers of low- to medium capacity DRAM has decreased; however, there are still many applications suitable for this type of legacy DRAM, such as consumer or automotive equipment that requires reduced noise designs.
      In addition, products with long life cycles, including communication and industrial systems, demand low-/medium-capacity DRAM since design changes such as replacing the controller is difficult or there is a need to keep costs low.
      LAPIS Semiconductor will continue to expand its legacy DRAM lineup with new high reliability products for the automotive and industrial equipment markets while ensuring long-term,
      stable supply.

Sales Plan

  • Part No.
    • MD56V72160C/MD56V82160A
  • Packaging
    • Tray 1080 units
  • Sample Shipment
    • Already started
  • Sample Price
    • MD56V72160C 360 yen (tax not included)
      MD56V82160A 520 yen (tax not included)
  • Mass Production
    • From March 2014

Specifications

  • Specifications
    • Compliant with JEDEC standards
  • Memory configuration
    • 4 banks × 2,097,152 words × 16 bits (MD56V72160C)
      4 banks × 4,194,304 words × 16 bits (MD56V82160A)
  • Address size
    • 4,096 rows × 512 columns (MD56V72160C)
      8,192 rows × 512 columns (MD56V82160A)
  • Operating frequency
    • 166MHz(max.)
  • Interface
    • LVTTL-compatible
  • Function
    • General-purpose SDRAM command interface
  • Power supply voltage
    • 3.3V ± 0.3V
  • Operating temperature
    • 0 to 70°C
      -40 to 85°C
  • Refresh
    • Auto-refresh 4,096 times/64msec (MD56V72160C)    8,192 times/64msec (MD56V82160A)
      Self-refresh
  • Power consumption (Typ.)
    • Operation (166MHz) : 100mA (MD56V72160C) , 150mA (MD56V82160A)
      Standby (active standby) : 50mA (MD56V72160C) , 65mA (MD56V82160A)
      Power down : 3mA
  • Packages
    • 54Pin TSOP
      Copper lead frame, RoHS compliant, lead-free, halogen-free

Contact

For customers' inquiry regarding this release: please go to   the inquiry page

* Information in the press releases is current on the date of the press announcement, but is subject to change without prior notice.

*Please note that the names of companies and products described in this document are the trademarks or registered trademarks
  of their respective companies and organizations.