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SiC Power Devices

SiC Schottky Barrier Diodes, SiC MOSFET, SiC Power Module, SiC MOSFET Bare Die

Description

Lineup

The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, SiC devicces maintain constant characteristics, resulting in better performance.

In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.

Switching loss of Full-SiC power module integrating SiC MOSFETs and SBDs is significantly lower than conventional IGBT modules. These new modules make high frequency operation above 100kHz possible (unlike conventional products).

In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.


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