Recommended Web browser of our site is Internet Explorer 9.0 and over or Google Chrome 33.0 and over.

Without the recommended environment, it may not be possible to use all features of our website.

If you use Windows XP ,we recommend use of Google Chrome.

Google Chrome is
available from here.

Home

 >  LSI  Integrated Circuits > Memory > FeRAM


Memory

FeRAM is Ferro-electric Random Access Memory from 32Kbit to 256Kbit configuration developed by ferroelectrics process and CMOS process technology.

FeRAM

  • Line up
  • Overview
  • Document
  • FeRAM cross reference search
  • Memory FAQ
 

Parallel BUS FeRAM

  Download Density

(bit)

Con-
figuration

(word×bit)

Supply
Voltage

(V)

Operating
speed
Read/Write
Endurance
Date
Retention
Operating
Temperature

(°C)

PKG Online
order
 

I2C BUS FeRAM

  Download Density

(bit)

Con-
figuration

(word×bit)

Supply
Voltage

(V)

Operating
speed
Read/Write
Endurance
Date
Retention
Operating
Temperature

(°C)

PKG Online
order
 

SPI BUS FeRAM

  Download Density

(bit)

Con-
figuration

(word×bit)

Supply
Voltage

(V)

Operating
speed
Read/Write
Endurance
Date
Retention
Operating
Temperature

(°C)

PKG Online
order
 

Overview

FeRAM is Ferro-electric Random Access Memory from 32Kbit to 256Kbit configuration developed by ferroelectrics process and CMOS process technology.

No backup by battery, high speed random read/write, rewrite up to 1 trillion times and low power consumption are offered for various applications.

LAPIS Semiconductor's FeRAM ensures high quality and uninterrupted supply within ROHM group.

Features

Features1
An overwhelming rewrite endurance Million-fold endurance compared with Flash memory

FeRAM(1 trillion times) achieved 1 million times of rewrite endurance more than Flash memory(100K to 1 million times).

The writing address management by the microcontroller is unnecessary because FeRAM can rewrite successive data.

Features2
High speed rewrite 100,000-fold high speed compared with Flash memory

FeRAM achieved high-speed rewrite performance compared to conventional Flash memory.

FeRAM provides 100,000 times faster rewrite speed (150ns) at rewriting 1 byte data compared with conventional Flash memory (700ms) because it does not need erase procedure and writing procedure.

Features3
Low power consumption 1/100 or less power consumption of Flash memory

FeRAM achieved low power consumption because it does not need erase procedure and writing procedure.

FeRAM is 100 times less power consumption during rewrite (0.2mW) compared with conventional Flash memory (35mW).

FeRAM is ideal for data backup during power outages and frequent data logging.

Features4
High reliability with ECC function

Built-in ECC (Error Check and Correction) function for all FeRAM products.

A memory is equipped with a data area and a correction signum data area.

The data used as a pair and correction signum data are read, and even if a bit error occurs, the corrected data will be outputted by ECC circuit.

 
Features 5
Superior electrical conductivity Cu(Copper) frame
銅リードフレーム

A lineup of products with a Cu frame is utilized for high connection reliability.

 

Applications

FeRAM

 

FeRAM Documents Download


 

Data
sheets

rev.

Users
Manual

rev.

White
paper

rev.

Errata

rev.

Other

rev.

Package Code

 

Dimensions

Implementation
specifications

Environmental
data

MSL

Cross reference search for Ferro-electric Random Access Memory offers LAPIS Semiconductor's equivalent products from the other manufacturer's Mask ROM part number.

The manufacture for the cross reference search is Cypress Fujitsu .

Enter part number by five or more characters. (Partial search is also available.)

Search result

 

part number

Density
(bit)

LAPIS Semiconductor equivalent

Datasheet

Status

Sample and Buy

 Note:

Cross-Reference information presented by LAPIS Semiconductor is based on our best comparative review of other manufacturers' published information at the time the information is collected.

We recommend, and it is the responsibility of our customers, to conduct thorough review of our latest datasheet and product specifications and to confirm the device functionality for your specific application.

LAPIS Semiconductor is not responsible for any incorrect or incomplete information and may alter the information at any time without notification or notice.



Change screen size